NHPD660T4G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

onsemi · exact orderable part

NHPD660T4G

DIODE GEN PURP 600V 6A DPAK

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
3 V @ 6 A
Current - Reverse Leakage @ Vr
30 µA @ 600 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30 ns
Operating Temperature - Junction
-65°C ~ 175°C
Product Status
Obsolete
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT)

Technical parameters

Technical specifications

NHPD660T4G technical parameters
ParameterValue
Base Product NumberNHPD660 [1]
Current - Average Rectified (Io)6A [1]
Current - Reverse Leakage @ Vr30 µA @ 600 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C ~ 175°C [1]
Product StatusObsolete [1]
Reverse Recovery Time (trr)30 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)600 V [1]
Voltage - Forward (Vf) (Max) @ If3 V @ 6 A [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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