1N3070 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

1N3070

DIODE GEN PURP 200V 500MA DO35

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io)
500mA
Voltage - Forward (Vf) (Max) @ If
1 V @ 100 mA
Current - Reverse Leakage @ Vr
100 nA @ 175 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50 ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Operating Temperature - Junction
175°C (Max)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseDO-204AH, DO-35, Axial
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

1N3070 technical parameters
ParameterValue
Base Product Number1N3070 [1]
Capacitance @ Vr, F5pF @ 0V, 1MHz [1]
Current - Average Rectified (Io)500mA [1]
Current - Reverse Leakage @ Vr100 nA @ 175 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction175°C (Max) [1]
Product StatusObsolete [1]
Reverse Recovery Time (trr)50 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)200 V [1]
Voltage - Forward (Vf) (Max) @ If1 V @ 100 mA [1]
Package / CaseDO-204AH, DO-35, Axial [1]

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