NDSH25170A representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

NDSH25170A

DIODE SIL CARB 1.7KV 25A TO247-2

Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1700 V
Current - Average Rectified (Io)
25A
Voltage - Forward (Vf) (Max) @ If
1.75 V @ 25 A
Current - Reverse Leakage @ Vr
40 µA @ 1700 V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Capacitance @ Vr, F
2025pF @ 1V, 100kHz
Operating Temperature - Junction
-55°C ~ 175°C
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-247-2
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

NDSH25170A technical parameters
ParameterValue
Base Product NumberNDSH25170 [1]
Capacitance @ Vr, F2025pF @ 1V, 100kHz [1]
Current - Average Rectified (Io)25A [1]
Current - Reverse Leakage @ Vr40 µA @ 1700 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-55°C ~ 175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)0 ns [1]
SpeedNo Recovery Time > 500mA (Io) [1]
TechnologySiC (Silicon Carbide) Schottky [1]
Voltage - DC Reverse (Vr) (Max)1700 V [1]
Voltage - Forward (Vf) (Max) @ If1.75 V @ 25 A [1]
Package / CaseTO-247-2 [1]

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