Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | MSC020 [1] |
| Capacitance @ Vr, F | 1130pF @ 1V, 1MHz [1] |
| Current - Average Rectified (Io) | 49A [1] |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V [1] |
| Mfr | Microchip Technology [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -55°C ~ 175°C [1] |
| Part Status | Active [1] |
| Reverse Recovery Time (trr) | 0 ns [1] |
| Speed | No Recovery Time > 500mA (Io) [1] |
| Technology | SiC (Silicon Carbide) Schottky [1] |
| Voltage - DC Reverse (Vr) (Max) | 1200 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A [1] |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA [1] |
Specification references[1]Microchip Technology MSC020SDA120S vendor product record ↗
