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Exact MPN12 sourced attributes1 source document

Microchip Technology · exact orderable part

MNS1N6627US/TR

DIODE GEN PURP 440V 1.75A E-MELF

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
440 V
Current - Average Rectified (Io)
1.75A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 2 A
Current - Reverse Leakage @ Vr
2 µA @ 440 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30 ns
Operating Temperature - Junction
-65°C ~ 150°C
Product Status
Active
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseSQ-MELF, B
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

MNS1N6627US/TR technical parameters
ParameterValue
Current - Average Rectified (Io)1.75A [1]
Current - Reverse Leakage @ Vr2 µA @ 440 V [1]
MfrMicrochip Technology [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C ~ 150°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)30 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)440 V [1]
Voltage - Forward (Vf) (Max) @ If1.35 V @ 2 A [1]
Package / CaseSQ-MELF, B [1]

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MNS1N6627US/TR Microchip Technology Datasheet, Specs and RFQ | MPNHarbor