MNS1N5822US/TR representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Microchip Technology · exact orderable part

MNS1N5822US/TR

DIODE SCHOTTKY 40V 3A SQ-MELF B

Grade
Military
Qualification
MIL-PRF-19500/620
Technology
Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)
40 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
500 mV @ 3 A
Current - Reverse Leakage @ Vr
100 µA @ 40 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction
-65°C ~ 125°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseSQ-MELF, B
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

MNS1N5822US/TR technical parameters
ParameterValue
Current - Average Rectified (Io)3A [1]
Current - Reverse Leakage @ Vr100 µA @ 40 V [1]
MfrMicrochip Technology [1]
GradeMilitary [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C ~ 125°C [1]
Product StatusActive [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
QualificationMIL-PRF-19500/620 [1]
TechnologySchottky, Reverse Polarity [1]
Voltage - DC Reverse (Vr) (Max)40 V [1]
Voltage - Forward (Vf) (Max) @ If500 mV @ 3 A [1]
Package / CaseSQ-MELF, B [1]

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