MNS1N5819UR-1/TR representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Microchip Technology · exact orderable part

MNS1N5819UR-1/TR

DIODE SCHOTTKY 45V 1A DO213AB

Grade
Military
Qualification
MIL-PRF-19500/586
Technology
Schottky
Voltage - DC Reverse (Vr) (Max)
45 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
490 mV @ 1 A
Current - Reverse Leakage @ Vr
50 µA @ 45 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
70pF @ 5V, 1MHz
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseDO-213AB, MELF (Glass)
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

MNS1N5819UR-1/TR technical parameters
ParameterValue
Capacitance @ Vr, F70pF @ 5V, 1MHz [1]
Current - Average Rectified (Io)1A [1]
Current - Reverse Leakage @ Vr50 µA @ 45 V [1]
MfrMicrochip Technology [1]
GradeMilitary [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C ~ 125°C [1]
Product StatusActive [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
QualificationMIL-PRF-19500/586 [1]
TechnologySchottky [1]
Voltage - DC Reverse (Vr) (Max)45 V [1]
Voltage - Forward (Vf) (Max) @ If490 mV @ 1 A [1]
Package / CaseDO-213AB, MELF (Glass) [1]

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