Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Capacitance @ Vr, F | 70pF @ 5V, 1MHz [1] |
| Current - Average Rectified (Io) | 1A [1] |
| Current - Reverse Leakage @ Vr | 50 µA @ 45 V [1] |
| Mfr | Microchip Technology [1] |
| Grade | Military [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -65°C ~ 125°C [1] |
| Product Status | Active [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Qualification | MIL-PRF-19500/586 [1] |
| Technology | Schottky [1] |
| Voltage - DC Reverse (Vr) (Max) | 45 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 490 mV @ 1 A [1] |
| Package / Case | DO-213AB, MELF (Glass) [1] |
Specification references[1]Microchip Technology MNS1N5819UR-1/TR vendor product record ↗
