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Exact MPN13 sourced attributes1 source document

Microchip Technology · exact orderable part

MNS1N5811US/TR

Name: MNS1N5811US/TR
Brand: Microchip Technology

DIODE GP 150V 3A SQ-MELF B

Original manufacturerCommercial terms confirmed per lot

ManufacturerMicrochip Technology

Package / caseSQ-MELF, B

Mounting typeSurface Mount

PackingBulk

Technical parameters

Technical specifications

13 normalized values · 1 validated source

MNS1N5811US/TR technical parameters
Parameter	Value
Capacitance @ Vr, F	60pF @ 10V, 1MHz [1]
Current - Average Rectified (Io)	3A [1]
Current - Reverse Leakage @ Vr	5 µA @ 150 V [1]
Mfr	Microchip Technology [1]
Mounting Type	Surface Mount [1]
Operating Temperature - Junction	-65°C ~ 175°C [1]
Product Status	Active [1]
Reverse Recovery Time (trr)	30 ns [1]
Speed	Fast Recovery =< 500ns, > 200mA (Io) [1]
Technology	Standard [1]
Voltage - DC Reverse (Vr) (Max)	150 V [1]
Voltage - Forward (Vf) (Max) @ If	875 mV @ 4 A [1]
Package / Case	SQ-MELF, B [1]

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