MNS1N5806US representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Microchip Technology · exact orderable part

MNS1N5806US

DIODE GEN PURP 160V 1A A SQ-MELF

Grade
Military
Qualification
MIL-PRF-19500/477
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
160 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
875 mV @ 1 A
Current - Reverse Leakage @ Vr
1 µA @ 150 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25 ns
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseSQ-MELF, A
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

MNS1N5806US technical parameters
ParameterValue
Capacitance @ Vr, F25pF @ 10V, 1MHz [1]
Current - Average Rectified (Io)1A [1]
Current - Reverse Leakage @ Vr1 µA @ 150 V [1]
MfrMicrochip Technology [1]
GradeMilitary [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C ~ 175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)25 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
QualificationMIL-PRF-19500/477 [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)160 V [1]
Voltage - Forward (Vf) (Max) @ If875 mV @ 1 A [1]
Package / CaseSQ-MELF, A [1]

Catalog relationships

Keep family and exact MPN intent separate.

This page describes one orderable part. A family page helps select suffixes but never carries assumed stock or a price.

Related exact parts

Other published parts

Browse exact MPNs and compare their specifications. These links do not imply compatibility or interchangeability.