Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Capacitance @ Vr, F | 821pF @ 1V, 1MHz [1] |
| Current - Average Rectified (Io) | 30A [1] |
| Current - Reverse Leakage @ Vr | 50 µA @ 170 V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -55°C ~ 175°C [1] |
| Product Status | Active [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Technology | Schottky [1] |
| Voltage - DC Reverse (Vr) (Max) | 170 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 890 mV @ 30 A [1] |
| Package / Case | 8-PowerTDFN, 5 Leads [1] |
Specification references[1]onsemi MBR30170MFST3G vendor product record ↗
