FES6G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

FES6G

DIODE GEN PURP 400V 6A TO277-3

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
400 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.2 V @ 6 A
Current - Reverse Leakage @ Vr
2 µA @ 400 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25 ns
Capacitance @ Vr, F
60pF @ 4V, 1MHz
Operating Temperature - Junction
-55°C ~ 175°C
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-277, 3-PowerDFN
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

FES6G technical parameters
ParameterValue
Base Product NumberFES6 [1]
Capacitance @ Vr, F60pF @ 4V, 1MHz [1]
Current - Average Rectified (Io)6A [1]
Current - Reverse Leakage @ Vr2 µA @ 400 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-55°C ~ 175°C [1]
Product StatusNot For New Designs [1]
Reverse Recovery Time (trr)25 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)400 V [1]
Voltage - Forward (Vf) (Max) @ If1.2 V @ 6 A [1]
Package / CaseTO-277, 3-PowerDFN [1]

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