FDT461N representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDT461N

MOSFET N-CH 100V 540MA SOT223-4

FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
540mA (Ta)
Rds On (Max) @ Id, Vgs
2Ohm @ 540mA, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 10 V
Power Dissipation (Max)
1.13W (Ta)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-261-4, TO-261AA
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

FDT461N technical parameters
ParameterValue
Base Product NumberFDT46 [1]
Current - Continuous Drain (Id) @ 25°C540mA (Ta) [1]
Drain to Source Voltage (Vdss)100 V [1]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs4 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds74 pF @ 25 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)1.13W (Ta) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs2Ohm @ 540mA, 10V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id2V @ 250µA [1]
Package / CaseTO-261-4, TO-261AA [1]

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