FDA8440 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDA8440

MOSFET N-CH 40V 30A/100A TO3PN

FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
2.1mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
450 nC @ 10 V
Power Dissipation (Max)
306W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-3P-3, SC-65-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

FDA8440 technical parameters
ParameterValue
Base Product NumberFDA84 [1]
Current - Continuous Drain (Id) @ 25°C30A (Ta), 100A (Tc) [1]
Drain to Source Voltage (Vdss)40 V [1]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs450 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds24740 pF @ 25 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~175°C(TJ) [1]
Power Dissipation (Max)306W (Tc) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs2.1mOhm @ 80A, 10V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / CaseTO-3P-3, SC-65-3 [1]

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