FDS4780 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDS4780

MOSFET N-CH 40V 10.8A 8SOIC

FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
10.8A (Ta)
Rds On (Max) @ Id, Vgs
10.5mOhm @ 10.8A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Power Dissipation (Max)
2.5W (Ta)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

FDS4780 technical parameters
ParameterValue
Base Product NumberFDS47 [1]
Current - Continuous Drain (Id) @ 25°C10.8A (Ta) [1]
Drain to Source Voltage (Vdss)40 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds1686 pF @ 20 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)2.5W (Ta) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs10.5mOhm @ 10.8A, 10V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id5V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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