FDS4470 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes2 source documents

onsemi · exact orderable part

FDS4470

POWER FIELD-EFFECT TRANSISTOR, 1

FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Ta)
Rds On (Max) @ Id, Vgs
9mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
+30V, -20V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Power Dissipation (Max)
2.5W (Ta)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

FDS4470 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C12.5A (Ta) [2]
Drain to Source Voltage (Vdss)40 V [2]
Drive Voltage (Max Rds On, Min Rds On)10V [2]
FET TypeN-Channel [2]
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V [2]
Input Capacitance (Ciss) (Max) @ Vds2659 pF @ 20 V [2]
Mfronsemi [2]
Mounting TypeSurface Mount [2]
Operating Temperature-55°C~175°C(TJ) [2]
Power Dissipation (Max)2.5W (Ta) [2]
Product StatusActive [2]
Rds On (Max) @ Id, Vgs9mOhm @ 12.5A, 10V [2]
SeriesPowerTrench® [2]
TechnologyMOSFET (Metal Oxide) [2]
Vgs (Max)+30V, -20V [2]
Vgs(th) (Max) @ Id5V @ 250µA [2]
Package / Case8-SOIC (0.154", 3.90mm Width) [2]

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