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FDS3572 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDS3572

MOSFET N-CH 80V 8.9A 8SOIC

FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
8.9A (Ta)
Rds On (Max) @ Id, Vgs
16mOhm @ 8.9A, 10V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Power Dissipation (Max)
2.5W (Ta)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

18 normalized values · 1 validated source

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ParameterValue
Base Product NumberFDS35 [1]
Current - Continuous Drain (Id) @ 25°C8.9A (Ta) [1]
Drain to Source Voltage (Vdss)80 V [1]
Drive Voltage (Max Rds On, Min Rds On)6V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds1990 pF @ 25 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)2.5W (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs16mOhm @ 8.9A, 10V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id4V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]
Specification references[1]onsemi FDS3572 vendor product record ↗

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ManufactureronsemiView brand page →CategoryTransistors - FETs, MOSFETs - SingleView category page →Part familyPowerTrench®Compare exact variants →

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