FDR6580 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDR6580

MOSFET N-CH 20V 11.2A SUPERSOT8

FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
11.2A (Ta)
Rds On (Max) @ Id, Vgs
9mOhm @ 11.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Vgs (Max)
±8V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 4.5 V
Power Dissipation (Max)
1.8W (Ta)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-LSOP (0.130", 3.30mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

FDR6580 technical parameters
ParameterValue
Base Product NumberFDR65 [1]
Current - Continuous Drain (Id) @ 25°C11.2A (Ta) [1]
Drain to Source Voltage (Vdss)20 V [1]
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs48 nC @ 4.5 V [1]
Input Capacitance (Ciss) (Max) @ Vds3829 pF @ 10 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)1.8W (Ta) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs9mOhm @ 11.2A, 4.5V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±8V [1]
Vgs(th) (Max) @ Id1.5V @ 250µA [1]
Package / Case8-LSOP (0.130", 3.30mm Width) [1]

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