FDN335N representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes2 source documents

onsemi · exact orderable part

FDN335N

MOSFET N-CH 20V 1.7A SUPERSOT3

FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)
Rds On (Max) @ Id, Vgs
70mOhm @ 1.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Vgs (Max)
±8V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V
Power Dissipation (Max)
500mW (Ta)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-236-3, SC-59, SOT-23-3
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

FDN335N technical parameters
ParameterValue
Base Product NumberFDN335 [2]
Current - Continuous Drain (Id) @ 25°C1.7A (Ta) [2]
Drain to Source Voltage (Vdss)20 V [2]
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V [2]
FET TypeN-Channel [2]
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V [2]
Input Capacitance (Ciss) (Max) @ Vds310 pF @ 10 V [2]
Mfronsemi [2]
Mounting TypeSurface Mount [2]
Operating Temperature-55°C~150°C(TJ) [2]
Power Dissipation (Max)500mW (Ta) [2]
Product StatusActive [2]
Rds On (Max) @ Id, Vgs70mOhm @ 1.7A, 4.5V [2]
SeriesPowerTrench® [2]
TechnologyMOSFET (Metal Oxide) [2]
Vgs (Max)±8V [2]
Vgs(th) (Max) @ Id1.5V @ 250µA [2]
Package / CaseTO-236-3, SC-59, SOT-23-3 [2]

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