FDJ128N representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDJ128N

MOSFET N-CH 20V 5.5A SC75-6 FLMP

FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Ta)
Rds On (Max) @ Id, Vgs
35mOhm @ 5.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Vgs (Max)
±12V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 5 V
Power Dissipation (Max)
1.6W (Ta)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseSC-75-6 FLMP
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

FDJ128N technical parameters
ParameterValue
Base Product NumberFDJ128 [1]
Current - Continuous Drain (Id) @ 25°C5.5A (Ta) [1]
Drain to Source Voltage (Vdss)20 V [1]
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs8 nC @ 5 V [1]
Input Capacitance (Ciss) (Max) @ Vds543 pF @ 10 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)1.6W (Ta) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs35mOhm @ 5.5A, 4.5V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±12V [1]
Vgs(th) (Max) @ Id1.5V @ 250µA [1]
Package / CaseSC-75-6 FLMP [1]

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