Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | FDG326 [1] |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 20 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V [1] |
| FET Type | P-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 467 pF @ 10 V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power Dissipation (Max) | 750mW (Ta) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 4.5V [1] |
| Series | PowerTrench® [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±8V [1] |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA [1] |
| Package / Case | 6-TSSOP, SC-88, SOT-363 [1] |
Specification references[1]onsemi FDG326P vendor product record ↗