Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | FDD663 [1] |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 30 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 255 pF @ 15 V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~175°C(TJ) [1] |
| Power Dissipation (Max) | 15W (Tc) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 9A, 10V [1] |
| Series | UltraFET™ [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Vgs(th) (Max) @ Id | 3V @ 250µA [1] |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 [1] |
Specification references[1]onsemi FDD6632 vendor product record ↗