FDA2712 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDA2712

MOSFET N-CH 250V 64A TO3PN

FET Type
N-Channel
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
Rds On (Max) @ Id, Vgs
34mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
129 nC @ 10 V
Power Dissipation (Max)
357W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-3P-3, SC-65-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

FDA2712 technical parameters
ParameterValue
Base Product NumberFDA27 [1]
Current - Continuous Drain (Id) @ 25°C64A (Tc) [1]
Drain to Source Voltage (Vdss)250 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs129 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds10175 pF @ 25 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)357W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs34mOhm @ 40A, 10V [1]
SeriesUltraFET™ [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±30V [1]
Vgs(th) (Max) @ Id5V @ 250µA [1]
Package / CaseTO-3P-3, SC-65-3 [1]

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