FDD5680 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

onsemi · exact orderable part

FDD5680

POWER FIELD-EFFECT TRANSISTOR, 3

FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Ta)
Rds On (Max) @ Id, Vgs
21mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Power Dissipation (Max)
2.8W (Ta), 60W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

FDD5680 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C8.5A (Ta) [1]
Drain to Source Voltage (Vdss)60 V [1]
Drive Voltage (Max Rds On, Min Rds On)6V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds1835 pF @ 30 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)2.8W (Ta), 60W (Tc) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs21mOhm @ 8.5A, 10V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id4V @ 250µA [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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