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FDD3570 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDD3570

MOSFET N-CH 80V 10A TO252

FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Rds On (Max) @ Id, Vgs
20mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Power Dissipation (Max)
3.4W (Ta), 69W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

18 normalized values · 1 validated source

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ParameterValue
Base Product NumberFDD357 [1]
Current - Continuous Drain (Id) @ 25°C10A (Ta) [1]
Drain to Source Voltage (Vdss)80 V [1]
Drive Voltage (Max Rds On, Min Rds On)6V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs76 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 40 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)3.4W (Ta), 69W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs20mOhm @ 10A, 10V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id4V @ 250µA [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]
Specification references[1]onsemi FDD3570 vendor product record ↗

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ManufactureronsemiView brand page →CategoryTransistors - FETs, MOSFETs - SingleView category page →Part familyPowerTrench®Compare exact variants →

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