FDB8878 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDB8878

MOSFET N-CH 30V 48A TO263

FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Rds On (Max) @ Id, Vgs
14mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Power Dissipation (Max)
47.3W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

FDB8878 technical parameters
ParameterValue
Base Product NumberFDB887 [1]
Current - Continuous Drain (Id) @ 25°C48A (Tc) [1]
Drain to Source Voltage (Vdss)30 V [1]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds1235 pF @ 15 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~175°C(TJ) [1]
Power Dissipation (Max)47.3W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs14mOhm @ 40A, 10V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id2.5V @ 250µA [1]
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB [1]

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