FDB8860 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FDB8860

MOSFET N-CH 30V 80A TO263AB

FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
2.3mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
214 nC @ 10 V
Power Dissipation (Max)
254W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

FDB8860 technical parameters
ParameterValue
Base Product NumberFDB886 [1]
Current - Continuous Drain (Id) @ 25°C80A (Tc) [1]
Drain to Source Voltage (Vdss)30 V [1]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs214 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds12585 pF @ 15 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~175°C(TJ) [1]
Power Dissipation (Max)254W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs2.3mOhm @ 80A, 10V [1]
SeriesPowerTrench® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB [1]

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