FBG20N18BC representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

EPC Space, LLC · exact orderable part

FBG20N18BC

GAN FET HEMT200V18A COTS 4FSMD-B

Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
5V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 100 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerEPC Space, LLC
Package / case4-SMD, No Lead
Mounting typeunknown
PackingBulk

Technical parameters

Technical specifications

FBG20N18BC technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C18A (Tc) [1]
Drain to Source Voltage (Vdss)200 V [1]
Drive Voltage (Max Rds On, Min Rds On)5V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs6 nC @ 5 V [1]
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 100 V [1]
MfrEPC Space, LLC [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs26mOhm @ 18A, 5V [1]
TechnologyGaNFET (Gallium Nitride) [1]
Vgs (Max)+6V, -4V [1]
Vgs(th) (Max) @ Id2.5V @ 3mA [1]

Catalog relationships

Keep family and exact MPN intent separate.

This page describes one orderable part. A family page helps select suffixes but never carries assumed stock or a price.