Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 200 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 5V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V [1] |
| Mfr | EPC Space, LLC [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 18A, 5V [1] |
| Technology | GaNFET (Gallium Nitride) [1] |
| Vgs (Max) | +6V, -4V [1] |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA [1] |
Specification references[1]EPC Space, LLC FBG20N18BC vendor product record ↗
