ES1JAF representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

ES1JAF

DIODE GEN PURP 600V 1A DO214AD

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 1 A
Current - Reverse Leakage @ Vr
1 µA @ 600 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
34 ns
Capacitance @ Vr, F
15pF @ 4V, 1MHz
Operating Temperature - Junction
-55°C ~ 150°C
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseDO-214AD, SMAF
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

ES1JAF technical parameters
ParameterValue
Base Product NumberES1 [1]
Capacitance @ Vr, F15pF @ 4V, 1MHz [1]
Current - Average Rectified (Io)1A [1]
Current - Reverse Leakage @ Vr1 µA @ 600 V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-55°C ~ 150°C [1]
Product StatusNot For New Designs [1]
Reverse Recovery Time (trr)34 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)600 V [1]
Voltage - Forward (Vf) (Max) @ If1.7 V @ 1 A [1]
Package / CaseDO-214AD, SMAF [1]

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ES1JAF onsemi Datasheet, Specs and RFQ | MPNHarbor