EGP30D representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

EGP30D

DIODE GEN PURP 200V 3A DO201AD

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
950 mV @ 3 A
Current - Reverse Leakage @ Vr
5 µA @ 200 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50 ns
Capacitance @ Vr, F
95pF @ 4V, 1MHz
Operating Temperature - Junction
-65°C ~ 150°C
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseDO-201AD, Axial
Mounting typeThrough Hole
PackingTape & Reel (TR) Cut Tape (CT)

Technical parameters

Technical specifications

EGP30D technical parameters
ParameterValue
Base Product NumberEGP30 [1]
Capacitance @ Vr, F95pF @ 4V, 1MHz [1]
Current - Average Rectified (Io)3A [1]
Current - Reverse Leakage @ Vr5 µA @ 200 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-65°C ~ 150°C [1]
Product StatusNot For New Designs [1]
Reverse Recovery Time (trr)50 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)200 V [1]
Voltage - Forward (Vf) (Max) @ If950 mV @ 3 A [1]
Package / CaseDO-201AD, Axial [1]

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