EGP10D representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes2 source documents

onsemi · exact orderable part

EGP10D

DIODE GEN PURP 200V 1A DO41

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
950 mV @ 1 A
Current - Reverse Leakage @ Vr
5 µA @ 200 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50 ns
Operating Temperature - Junction
-65°C ~ 150°C
Product Status
Not For New Designs
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseDO-204AL, DO-41, Axial
Mounting typeThrough Hole
PackingTape & Reel (TR) Cut Tape (CT)

Technical parameters

Technical specifications

EGP10D technical parameters
ParameterValue
Base Product NumberEGP10 [2]
Current - Average Rectified (Io)1A [2]
Current - Reverse Leakage @ Vr5 µA @ 200 V [2]
Mfronsemi [2]
Mounting TypeThrough Hole [2]
Operating Temperature - Junction-65°C ~ 150°C [2]
Product StatusNot For New Designs [2]
Reverse Recovery Time (trr)50 ns [2]
SpeedFast Recovery =< 500ns, > 200mA (Io) [2]
TechnologyStandard [2]
Voltage - DC Reverse (Vr) (Max)200 V [2]
Voltage - Forward (Vf) (Max) @ If950 mV @ 1 A [2]
Package / CaseDO-204AL, DO-41, Axial [2]

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