DSC08065D1 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DSC08065D1

DIODE SIL CARBIDE 650V 8A TO252

Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Current - Reverse Leakage @ Vr
230 µA @ 650 V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Capacitance @ Vr, F
295pF @ 100mV, 1MHz
Operating Temperature - Junction
-55°C ~ 175°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DSC08065D1 technical parameters
ParameterValue
Base Product NumberDSC08 [1]
Capacitance @ Vr, F295pF @ 100mV, 1MHz [1]
Current - Average Rectified (Io)8A [1]
Current - Reverse Leakage @ Vr230 µA @ 650 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-55°C ~ 175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)0 ns [1]
SpeedNo Recovery Time > 500mA (Io) [1]
TechnologySiC (Silicon Carbide) Schottky [1]
Voltage - DC Reverse (Vr) (Max)650 V [1]
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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