Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DSC06 [1] |
| Capacitance @ Vr, F | 273pF @ 100mV, 1MHz [1] |
| Current - Average Rectified (Io) | 6A [1] |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature - Junction | -55°C ~ 175°C [1] |
| Product Status | Active [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Technology | SiC (Silicon Carbide) Schottky [1] |
| Voltage - DC Reverse (Vr) (Max) | 650 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A [1] |
| Package / Case | TO-220-2 Full Pack, Isolated Tab [1] |
Specification references[1]Diodes Incorporated DSC06A065FP vendor product record ↗
