Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DSC06 [2] |
| Capacitance @ Vr, F | 225pF @ 100mV, 1MHz [2] |
| Current - Average Rectified (Io) | 6A [2] |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V [2] |
| Mfr | Diodes Incorporated [2] |
| Mounting Type | Through Hole [2] |
| Operating Temperature - Junction | -55°C ~ 175°C [2] |
| Product Status | Active [2] |
| Reverse Recovery Time (trr) | 0 ns [2] |
| Speed | No Recovery Time > 500mA (Io) [2] |
| Technology | SiC (Silicon Carbide) Schottky [2] |
| Voltage - DC Reverse (Vr) (Max) | 650 V [2] |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A [2] |
| Package / Case | TO-220-2 [2] |
Specification references[1]DSC06065 delivered document ↗[2]Diodes Incorporated DSC06065 vendor product record ↗
