DSC04C065D1-13 representative package visual — not an exact-product photograph
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Exact MPN13 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DSC04C065D1-13

SILICON CARBIDE RECTIFIER TO252

Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 4 A
Current - Reverse Leakage @ Vr
170 µA @ 650 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
150pF @ 100mV, 1MHz
Operating Temperature - Junction
-55°C ~ 175°C
Product Status
Active
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

DSC04C065D1-13 technical parameters
ParameterValue
Base Product NumberDSC04 [1]
Capacitance @ Vr, F150pF @ 100mV, 1MHz [1]
Current - Average Rectified (Io)4A [1]
Current - Reverse Leakage @ Vr170 µA @ 650 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-55°C ~ 175°C [1]
Product StatusActive [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
TechnologySiC (Silicon Carbide) Schottky [1]
Voltage - DC Reverse (Vr) (Max)650 V [1]
Voltage - Forward (Vf) (Max) @ If1.7 V @ 4 A [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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