Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DGTD65 [1] |
| Current - Collector (Ic) (Max) | 100 A [1] |
| Current - Collector Pulsed (Icm) | 180 A [1] |
| Gate Charge | 95 nC [1] |
| IGBT Type | Field Stop [1] |
| Input Type | Standard [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -40°C ~ 175°C (TJ) [1] |
| Power - Max | 428 W [1] |
| Product Status | Obsolete [1] |
| Switching Energy | 920µJ (on), 530µJ (off) [1] |
| Reverse Recovery Time (trr) | 205 ns [1] |
| Td (on/off) @ 25°C | 42ns/142ns [1] |
| Test Condition | 400V, 60A, 7Ohm, 15V [1] |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 60A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 650 V [1] |
| Package / Case | TO-247-3 [1] |
Specification references[1]Diodes Incorporated DGTD65T60S2PT vendor product record ↗
