Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DGTD65 [1] |
| Current - Collector (Ic) (Max) | 80 A [1] |
| Current - Collector Pulsed (Icm) | 120 A [1] |
| Gate Charge | 60 nC [1] |
| IGBT Type | Field Stop [1] |
| Input Type | Standard [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -40°C ~ 175°C (TJ) [1] |
| Power - Max | 230 W [1] |
| Product Status | Obsolete [1] |
| Switching Energy | 500µJ (on), 400µJ (off) [1] |
| Reverse Recovery Time (trr) | 60 ns [1] |
| Td (on/off) @ 25°C | 6ns/55ns [1] |
| Test Condition | 400V, 40A, 10Ohm, 15V [1] |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 650 V [1] |
| Package / Case | TO-247-3 [1] |
Specification references[1]Diodes Incorporated DGTD65T40S2PT vendor product record ↗
