BAS21QBZ representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Nexperia USA Inc. · exact orderable part

BAS21QBZ

DIODE GP 200V 250MA DFN1110D-3

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io)
250mA
Voltage - Forward (Vf) (Max) @ If
1.25 V @ 200 mA
Current - Reverse Leakage @ Vr
100 nA @ 200 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50 ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Operating Temperature - Junction
150°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerNexperia USA Inc.
Package / case3-XDFN Exposed Pad
Mounting typeSurface Mount, Wettable Flank
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

BAS21QBZ technical parameters
ParameterValue
Base Product NumberBAS21 [1]
Capacitance @ Vr, F5pF @ 0V, 1MHz [1]
Current - Average Rectified (Io)250mA [1]
Current - Reverse Leakage @ Vr100 nA @ 200 V [1]
MfrNexperia USA Inc. [1]
Mounting TypeSurface Mount, Wettable Flank [1]
Operating Temperature - Junction150°C [1]
Product StatusObsolete [1]
Reverse Recovery Time (trr)50 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)200 V [1]
Voltage - Forward (Vf) (Max) @ If1.25 V @ 200 mA [1]
Package / Case3-XDFN Exposed Pad [1]

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BAS21QBZ Nexperia USA Inc. Datasheet, Specs and RFQ | MPNHarbor