BAS16T116 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Rohm Semiconductor · exact orderable part

BAS16T116

DIODE GEN PURP 80V 100MA SSD3

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
80 V
Current - Average Rectified (Io)
100mA
Voltage - Forward (Vf) (Max) @ If
1.2 V @ 100 mA
Current - Reverse Leakage @ Vr
100 nA @ 70 V
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4 ns
Capacitance @ Vr, F
3.5pF @ 6V, 1MHz
Operating Temperature - Junction
150°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerRohm Semiconductor
Package / caseTO-236-3, SC-59, SOT-23-3
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

BAS16T116 technical parameters
ParameterValue
Base Product NumberBAS16 [1]
Capacitance @ Vr, F3.5pF @ 6V, 1MHz [1]
Current - Average Rectified (Io)100mA [1]
Current - Reverse Leakage @ Vr100 nA @ 70 V [1]
MfrRohm Semiconductor [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction150°C [1]
Product StatusObsolete [1]
Reverse Recovery Time (trr)4 ns [1]
SpeedSmall Signal =< 200mA (Io), Any Speed [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)80 V [1]
Voltage - Forward (Vf) (Max) @ If1.2 V @ 100 mA [1]
Package / CaseTO-236-3, SC-59, SOT-23-3 [1]

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