Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | 1N5819 [1] |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz [1] |
| Current - Average Rectified (Io) | 1A [1] |
| Current - Reverse Leakage @ Vr | 1 mA @ 40 V [1] |
| Mfr | Diodes Incorporated [1] |
| Grade | Automotive [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -65°C ~ 125°C [1] |
| Product Status | Active [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Qualification | AEC-Q101 [1] |
| Technology | Schottky [1] |
| Voltage - DC Reverse (Vr) (Max) | 40 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 450 mV @ 1 A [1] |
| Package / Case | SOD-123 [1] |
Specification references[1]Diodes Incorporated 1N5819HWQ-7-F vendor product record ↗
