1N4448-T representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Diodes Incorporated · exact orderable part

1N4448-T

DIODE GEN PURP 75V 150MA DO35

Technology
Standard
Voltage - DC Reverse (Vr) (Max)
75 V
Current - Average Rectified (Io)
150mA
Voltage - Forward (Vf) (Max) @ If
1 V @ 100 mA
Current - Reverse Leakage @ Vr
5 µA @ 75 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4 ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Operating Temperature - Junction
-65°C ~ 175°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseDO-204AH, DO-35, Axial
Mounting typeThrough Hole
PackingTape & Reel (TR)

Technical parameters

Technical specifications

1N4448-T technical parameters
ParameterValue
Base Product Number1N4448 [1]
Capacitance @ Vr, F4pF @ 0V, 1MHz [1]
Current - Average Rectified (Io)150mA [1]
Current - Reverse Leakage @ Vr5 µA @ 75 V [1]
MfrDiodes Incorporated [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-65°C ~ 175°C [1]
Product StatusObsolete [1]
Reverse Recovery Time (trr)4 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
TechnologyStandard [1]
Voltage - DC Reverse (Vr) (Max)75 V [1]
Voltage - Forward (Vf) (Max) @ If1 V @ 100 mA [1]
Package / CaseDO-204AH, DO-35, Axial [1]

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