ZXTN2010ASTZ representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image1 of 2
Exact MPN14 sourced attributes1 source document

Diodes Incorporated · exact orderable part

ZXTN2010ASTZ

TRANS NPN 60V 4.5A TO92-3

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
60 V
Current - Collector (Ic) (Max)
4.5 A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic
210mV @ 200mA, 5A
Frequency - Transition
130MHz
Power - Max
710 mW
Current - Collector Cutoff (Max)
100nA
Operating Temperature
-55°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseE-Line-3
Mounting typeThrough Hole
PackingTape & Reel (TR)

Technical parameters

Technical specifications

ZXTN2010ASTZ technical parameters
ParameterValue
Current - Collector (Ic) (Max)4.5 A [1]
Base Product NumberZXTN2010 [1]
Current - Collector Cutoff (Max)100nA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 1V [1]
Frequency - Transition130MHz [1]
MfrDiodes Incorporated [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max710 mW [1]
Product StatusActive [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic210mV @ 200mA, 5A [1]
Voltage - Collector Emitter Breakdown (Max)60 V [1]
Package / CaseE-Line-3 [1]

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