Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Mfr | Diodes Incorporated [1] |
| Base Product Number | ZXTDE4M832 [1] |
| Product Status | Obsolete [1] |
| Current - Collector (Ic) (Max) | 3.5A, 2.5A [1] |
| Current - Collector Cutoff (Max) | 25nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 200mA, 2V / 40 @ 1.5A, 5V [1] |
| Frequency - Transition | 160MHz, 180MHz [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 1W [1] |
| Transistor Type | NPN, PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 325mV @ 300mA, 3.5A, 260mV @ 200mA, 1.5A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 80V, 70V [1] |
| Package / Case | 8-VDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated ZXTDE4M832TA vendor product record ↗
