Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Mfr | Diodes Incorporated [1] |
| Base Product Number | ZXTDB2M832 [1] |
| Product Status | Obsolete [1] |
| Current - Collector (Ic) (Max) | 4.5A, 3.5A [1] |
| Current - Collector Cutoff (Max) | 25nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A, 2V / 150 @ 2A, 2V [1] |
| Frequency - Transition | 140MHz, 180MHz [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 1.7W [1] |
| Transistor Type | NPN, PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 270mV @ 125mA, 4.5A, 300mV @ 350mA, 3.5A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 20V [1] |
| Package / Case | 8-VDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated ZXTDB2M832TA vendor product record ↗
