Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | ZXTDA1M832 [1] |
| Current - Collector (Ic) (Max) | 4.5A, 4A [1] |
| Current - Collector Cutoff (Max) | 25nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 3A, 2V / 180 @ 2.5A, 2V [1] |
| Frequency - Transition | 120MHz, 110MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 1W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN, PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 280mV @ 50mA, 4.5A / 300mV @ 150mA, 4A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 15V, 12V [1] |
| Package / Case | 8-VDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated ZXTDA1M832TA vendor product record ↗
