Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | ZXTD1M832 [1] |
| Current - Collector (Ic) (Max) | 4A [1] |
| Current - Collector Cutoff (Max) | 25nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2.5A, 2V [1] |
| Frequency - Transition | 110MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 1.7W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | 2 PNP (Dual) [1] |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 150mA, 4A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 12V [1] |
| Package / Case | 8-VDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated ZXTD1M832TA vendor product record ↗
