Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Mfr | Diodes Incorporated [1] |
| Base Product Number | ZXTD09N50D [1] |
| Product Status | Obsolete [1] |
| Current - Collector (Ic) (Max) | 1A [1] |
| Current - Collector Cutoff (Max) | 10nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V [1] |
| Frequency - Transition | 215MHz [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 1.1W [1] |
| Transistor Type | 2 NPN (Dual) [1] |
| Vce Saturation (Max) @ Ib, Ic | 270mV @ 50mA, 1A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 50V [1] |
| Package / Case | SOT-23-6 [1] |
Specification references[1]Diodes Incorporated ZXTD09N50DE6TC vendor product record ↗
