Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 3 A [1] |
| Base Product Number | ZXT10N50 [1] |
| Current - Collector Cutoff (Max) | 100nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V [1] |
| Frequency - Transition | 165MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 1.1 W [1] |
| Product Status | Active [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 3A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 50 V [1] |
| Package / Case | SOT-23-6 [1] |
Specification references[1]Diodes Incorporated ZXT10N50DE6TA vendor product record ↗
