Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | ZXMN6 [1] |
| Configuration | 2 N-Channel (Dual) [1] |
| Current - Continuous Drain (Id) @ 25°C | 2.5A [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 60V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 40V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 5.7nC @ 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 1.8W [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]Diodes Incorporated ZXMN6A11DN8TA vendor product record ↗