Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.9A [1] |
| Drain to Source Voltage (Vdss) | 20V [1] |
| FET Feature | Logic Level Gate [1] |
| FET Type | 2 N-Channel (Dual) [1] |
| Gate Charge (Qg) (Max) @ Vgs | 22.1nC @ 5V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 1880pF @ 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 1.8W [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.9A, 4.5V [1] |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]Diodes Incorporated ZXMN2A04DN8TC vendor product record ↗
