ZXMN2A04DN8TC representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Diodes Incorporated · exact orderable part

ZXMN2A04DN8TC

MOSFET 2N-CH 20V 5.9A 8SOIC

FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.9A
Rds On (Max) @ Id, Vgs
25mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
22.1nC @ 5V
Power - Max
1.8W
Input Capacitance (Ciss) (Max) @ Vds
1880pF @ 10V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

ZXMN2A04DN8TC technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C5.9A [1]
Drain to Source Voltage (Vdss)20V [1]
FET FeatureLogic Level Gate [1]
FET Type2 N-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs22.1nC @ 5V [1]
Input Capacitance (Ciss) (Max) @ Vds1880pF @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max1.8W [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs25mOhm @ 5.9A, 4.5V [1]
Vgs(th) (Max) @ Id700mV @ 250µA (Min) [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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