Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | ZXMHC6A07 [1] |
| Configuration | 2 N and 2 P-Channel (Full Bridge) [1] |
| Current - Continuous Drain (Id) @ 25°C | 1.39A, 1.28A [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 60V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 166pF @ 40V, 141pF @ 50V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 870mW [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.8A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 3V @ 250µA [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]Diodes Incorporated ZXMHC6A07N8TC vendor product record ↗